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Physics of Semiconductor Devices

Author(s):
Publisher:

Springer

Pages: 649
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AVAILABLE FORMATS

Paperback - 9781493946990

10 September 2016

$89.99

In stock

Ebook - 9781493911516

11 December 2014

$69.99

In stock

All prices are shown excluding Tax

This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices.  Details are worked out carefully and...

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This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices.  Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to  measuring methods for the semiconductor-device parameters.

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Provides comprehensive guide for practitioners and beginners, describing the physics of semiconductors from fundamentals to applications

Proceeds from first principles to description of actual devices' behavior

Includes mathematical derivations and explicit calculations, without being wordy

Part I A Review of Analytical Mechanics and Electromagnetism
Analytical Mechanics
Coordinate Transformations and Invariance Properties
Applications of the Concepts of Analytical Mechanics
Electromagnetism
Applications of the Concepts of Electromagnetism
Part II Introductory Concepts to Statistical and Quantum Mechanics
Classical Distribution Function and Transport Equation
From Classical Mechanics to Quantum Mechanics
Time-Independent Schrodinger Equation
Time-Dependent Schrodinger Equation
General Methods of Quantum Mechanics
Part III Applications of the Schrodinger Equation
Elementary Cases
Cases Related to the Linear Harmonic Oscillator
Other Examples of the Schrodinger Equation
Time-Dependent Perturbation Theory
Part IV Systems of Interacting Particles— Quantum Statistics
Many-Particle Systems
Separation of Many-Particle Systems
Part V Applications to Semiconducting Crystals
Periodic Structures
Electrons and Holes in Semiconductors at Equilibrium
Part VI Transport Phenomena in Semiconductors
Mathematical Model of Semiconductor Devices
Generation-Recombination and Mobility
Part VII Basic Semiconductor Devices
Bipolar Devices
MOS Devices
Part VIII Miscellany
Thermal Diffusion
Thermal Oxidation— Layer Deposition
Measuring the Semiconductor Parameters.
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M. Rudan (b. 1949) graduated in Electrical Engineering (1973) and in Physics (1976), both at the University of Bologna, Italy. Lecturer (1978), Associate Professor (1985), and Full Professor of Electronics (1990) at the Faculty of Engineering of the same University. Early investigations (1975-1980) in the field of the analytical modeling of semiconductor devices. Since 1980 M. R. has been working in a group involved in investigations on physics of carrier transport and numerical analysis of semiconductor devices. Visiting scientist, on a one-year assignment (1986), at the IBM T. J. Watson Research Center, studying solution methods for the Boltzmann Transport Equation. Reviewer and Guest Editor of the IEEE...

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M. Rudan (b. 1949) graduated in Electrical Engineering (1973) and in Physics (1976), both at the University of Bologna, Italy. Lecturer (1978), Associate Professor (1985), and Full Professor of Electronics (1990) at the Faculty of Engineering of the same University. Early investigations (1975-1980) in the field of the analytical modeling of semiconductor devices. Since 1980 M. R. has been working in a group involved in investigations on physics of carrier transport and numerical analysis of semiconductor devices. Visiting scientist, on a one-year assignment (1986), at the IBM T. J. Watson Research Center, studying solution methods for the Boltzmann Transport Equation. Reviewer and Guest Editor of the IEEE Transactions on Computer-Aided Design and IEEE Transactions on Electron Devices; Editor of COMPEL and of the International Journal of Numerical Modeling; Reviewer of the IEEE Electron Device Letters, Solid-State Electronics, Electronics Letters, Physical Review B, Journal of Applied Physics; Program Chairman, Chairman, or Committee Member, of the IEDM, SISDEP (SISPAD), ESSDERC, and IWCE International Conferences. With H. Baltes and W. Göpel, M. R. is a recipient of the 1998 Körber Foundation Award for the Project “Elektronische ‘Mikronase’ für flüchtige organische Verbindungen” (“Electronic ‘Micronose’ for Volatile Organic Compounds”). In 2001 M. R. was one of the founders of the Advanced Research Center for Electronic Systems (ARCES) of the University of Bologna. Distinguished Lecturer of the Electron Device Society of the IEEE (2004) and IEEE Fellow (2008). 

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